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 Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
MJE170/171/172
DESCRIPTION With TO-126 package Complement to type MJE180/181/182 APPLICATIONS For low power audio amplifier and low current high speed switching applications
PINNING (see Fig.2) PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION
Absolute Maximun Ratings (Ta=25ae )
SYMBOL
VCBO

PARAMETER
CHA IN
Collector current
Collector-base voltage
ES NG
MJE171 MJE172 MJE170 MJE171 MJE172
MJE170
Open emitter
MIC E
CONDITIONS
OND
TOR UC
VALUE -60 -80 -100 -40
UNIT
V
VCEO
Collector-emitter voltage
Open base
-60 -80
V
VEBO IC ICM IB
Emitter-base voltage
Open collector
-7 -3 -6 -1
V A A A
Collector current-peak Base current Ta=25ae
1.5 W 12.5 150 -65~150 ae ae
PC
Collector power dissipation TC=25ae
Tj Tstg
Junction temperature Storage temperature
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER MJE170 V(BR)CEO Collector-emitter breakdown voltage MJE171 MJE172 VCEsat-1 VCEsat-2 VCEsat-3 VBEsat-1 VBEsat-2 VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage IC=-500mA ;IB=-50mA IC=-1.5A ;IB=-150mA IC=-3A ;IB=-600mA IC=-1.5A ;IB=-150mA IC=-3A ;IB=-600mA IC=-500mA ; VCE=-1V VCB=-60V; IE=0 TC=150ae VCB=-80V; IE=0 TC=150ae IC=-10mA;IB=0 CONDITIONS
MJE170/171/172
SYMBOL
MIN -40 -60 -80
TYP.
MAX
UNIT
V
-0.3 -0.9 -1.7 -1.5
V V V V V V |I |I |I A mA A mA A mA A
ICBO

IEBO hFE-1 hFE-2 hFE-3 fT COB
CHA IN
Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency Output capacitance
Collector cut-off current
E SEM NG
MJE170 MJE171 MJE172
OND IC
TOR UC
-1.2 -0.1 -0.1 -0.1 -0.1 -0.1 -0.1 -0.1 |I
-2.0
VCB=-100V; IE=0 TC=150ae VEB=-7V; IC=0 IC=-100mA ; VCE=-1V IC=-500mA ; VCE=-1V IC=-1.5A ; VCE=-1V 50 30 12 50
250
IC=-100mA ; VCE=-10V IE=0 ; VCB=-10V,f=0.1MHz
MHz 50 pF
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
MJE170/171/172

CHA IN
E SEM NG
OND IC
TOR UC
Fig.2 Outline dimensions
3


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