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Inchange Semiconductor Product Specification Silicon PNP Power Transistors MJE170/171/172 DESCRIPTION With TO-126 package Complement to type MJE180/181/182 APPLICATIONS For low power audio amplifier and low current high speed switching applications PINNING (see Fig.2) PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION Absolute Maximun Ratings (Ta=25ae ) SYMBOL VCBO PARAMETER CHA IN Collector current Collector-base voltage ES NG MJE171 MJE172 MJE170 MJE171 MJE172 MJE170 Open emitter MIC E CONDITIONS OND TOR UC VALUE -60 -80 -100 -40 UNIT V VCEO Collector-emitter voltage Open base -60 -80 V VEBO IC ICM IB Emitter-base voltage Open collector -7 -3 -6 -1 V A A A Collector current-peak Base current Ta=25ae 1.5 W 12.5 150 -65~150 ae ae PC Collector power dissipation TC=25ae Tj Tstg Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER MJE170 V(BR)CEO Collector-emitter breakdown voltage MJE171 MJE172 VCEsat-1 VCEsat-2 VCEsat-3 VBEsat-1 VBEsat-2 VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage IC=-500mA ;IB=-50mA IC=-1.5A ;IB=-150mA IC=-3A ;IB=-600mA IC=-1.5A ;IB=-150mA IC=-3A ;IB=-600mA IC=-500mA ; VCE=-1V VCB=-60V; IE=0 TC=150ae VCB=-80V; IE=0 TC=150ae IC=-10mA;IB=0 CONDITIONS MJE170/171/172 SYMBOL MIN -40 -60 -80 TYP. MAX UNIT V -0.3 -0.9 -1.7 -1.5 V V V V V V |I |I |I A mA A mA A mA A ICBO IEBO hFE-1 hFE-2 hFE-3 fT COB CHA IN Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency Output capacitance Collector cut-off current E SEM NG MJE170 MJE171 MJE172 OND IC TOR UC -1.2 -0.1 -0.1 -0.1 -0.1 -0.1 -0.1 -0.1 |I -2.0 VCB=-100V; IE=0 TC=150ae VEB=-7V; IC=0 IC=-100mA ; VCE=-1V IC=-500mA ; VCE=-1V IC=-1.5A ; VCE=-1V 50 30 12 50 250 IC=-100mA ; VCE=-10V IE=0 ; VCB=-10V,f=0.1MHz MHz 50 pF 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE MJE170/171/172 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions 3 |
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